MMDF4C03HD Datasheet, PDF (1/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk ^P–G
drives and tape drives.
• Ultra Low RDS(on) Provides Higher Efficiency and
Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package —
Saves Board Space
• Ideal for Synchronous Rectification
• Diode Exhibits High Speed, With Soft Recovery
N–G
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
Order this document
by MMDF4C03HD/D
MMDF4C03HD
Motorola Preferred Device
COMPLEMENTARY
DUAL TMOS POWER FET
30 VOLTS
N–CH
P–CH
RDS(on)
RDS(on)
=
=
50
85
mW
mW
™
P–S
CASE 751–05, Style 11
SO–8
D
N–Source
18
Drain
N–Gate
27
Drain
P–Source
36
Drain
P–Gate
45
Drain
Top View
N–S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Polarity
Drain–to–Source Voltage
Gate–to–Source Voltage
Drain Current — Continuous
VDSS
VGS
ID
—
—
N–Channel
P–Channel
Drain Current — Pulsed
IDM
N–Channel
P–Channel
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25°C ⁽¹⁾
W Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
W (VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient ⁽¹⁾
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec.
DEVICE MARKING
TJ, Tstg
PD
EAS
R_θJA
TL
—
N–Channel
P–Channel
D4C03
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF4C03HDR2
13″
12 mm embossed tape
2500
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Value
30
± 20
5.5
4.4
25
20
–55 to +150
2.5
325
450
50
260
Unit
Vdc
Vdc
Adc
Apk
°C
Watts
mJ
°C/W
°C
©^MM^oot^to^oro^rola^l,^aIn^Tc.^M19^O9^S7 ^{Power MOSFET Transistor Device Data}
1