MMDF4C03HD Datasheet, PDF (3/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
MMDF4C03HD
12
10 V
10 ^{6.0 V}
4.5 V
8.0 ^{4.3 V}
4.1 V
6.0
3.9 V _{3.7 V}
TJ = 25°C
3.5 V
3.3 V
4.0
3.1 V
2.9 V
2.0
VGS = 2.5 V
2.7 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
6.0
VGS = 10 V
5.0 ^{6.0 V}
4.5 V
4.0 ^{4.3 V}
3.0
TJ = 25°C
4.1 V
3.9 V
3.7 V
3.5 V
2.0
3.3 V
3.1 V
1.0
2.9 V
2.7 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
12
10 ^{VDS ≥ 10 V}
8.0
6.0
100°C
25°C
4.0
2.0
TJ = –55°C
0
1.5
2.0 2.5
3.0 3.5
4.0
4.5
5.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
6.0
5.0 ^{VDS ≥ 10 V}
100°C
4.0
3.0
2.0
1.0
25°C
TJ = –55°C
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.30
0.25
TJ = 25°C
ID = 6 A
0.20
0.15
0.10
0.05
0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
0.8
0.7
TJ = 25°C
ID = 3 A
0.6
0.5
0.4
0.3
0.2
0.1
0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3