MMDF4C03HD Datasheet, PDF (4/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

MMDF4C03HD
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
0.050
0.045
TJ = 25°C
0.040
VGS = 4.5 V
0.035
0.030
10 V
0.025
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.18
TJ = 25°C
0.16
0.14
VGS = 4.5 V
0.12
0.10
0.08
10 V
0.06
0.04
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.8
1.6
VGS = 10 V
1.4
ID = 3 A
1.2
1.0
0.8
0.6
0.4
0.2
0
–50 –25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1000
VGS = 0 V
100
TJ = 125°C
1.6
1.4
VGS = 10 V
ID = 1.5 A
1.2
1.0
0.8
0.6
0.4
0.2
0
–50
–25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100
VGS = 0 V
TJ = 125°C
100°C
10
10
1.0
25°C
100°C
0.1
0
5.0
10
15
20
25
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
1.0
0
5.0
10
15
20
25
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
4
Motorola TMOS Power MOSFET Transistor Device Data