PS21353-N Datasheet, PDF (8/9 Pages) Mitsubishi Electric Semiconductor – 600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
PS21353-N
TRANSFER-MOLD TYPE
INSULATED TYPE
[C] Under-Voltage Protection (P-side, UVDB)
c1. Control supply voltage rises : After the voltage level reachs UVDBr, the circuits start to operate when the next input is applied.
c2. Normal operation : IGBT ON and carrying current.
c3. Under-voltage trip (UVDBt).
c4. IGBT OFF in spite of control input condition (there is no FO signal output).
c5. Under-voltage reset (UVDBr).
c6. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state
Control supply voltage VDB
RESET
UVDBr
c1
SET
UVDBt
c3
RESET
c5
Output current Ic
c2
c4
c6
Fault output Fo
High-level (no fault output)
Fig. 6 RECOMMENDED CPU I/O INTERFACE CIRCUIT
5V line
5.1kΩ
CPU
1nF
4.7kΩ
1nF
DIP-IPM
UP,VP,WP,UN,VN,WN
Fo
VNC(GND)
Note : RC coupling at each input (parts shown dotted) may change depending on the
PWM control scheme used in the application and on the wiring impedance of
the application’s printed circuit board.
Sep. 2001