PS21353-N Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – 600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
PS21353-N
TRANSFER-MOLD TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCC
VCC(surge)
VCES
±IC
±ICP
PC
Tj
Parameter
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Condition
Applied between P-N
Applied between P-N
Tf = 25°C
Tf = 25°C, instantaneous value (pulse)
Tf = 25°C, per 1 chip
(Note 1)
Ratings
Unit
450
V
500
V
600
V
10
A
20
A
25
W
–20~+150
°C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ Tf ≤ 100°C). However, to
ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ Tf ≤ 100°C).
CONTROL (PROTECTION) PART
Symbol
VD
VDB
Parameter
Control supply voltage
Control supply voltage
VCIN
VFO
IFO
VSC
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Condition
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS,
VWFB-VWFS
Applied between UP, VP, WP-VNC,
UN, VN, WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Ratings
Unit
20
V
20
V
–0.5~VD+0.5
V
–0.5~VD+0.5
V
15
mA
–0.5~VD+0.5
V
TOTAL SYSTEM
Symbol
Parameter
VCC(PROT) Self protection supply voltage limit
(short-circuit protection capability)
Tf
Heat-fin operation temperature
Tstg
Storage temperature
Viso
Isolation voltage
Condition
VD = VDB = 13.5~16.5V, Inverter part
Tj = 125°C, non-repetitive, less than 2 µs
(Note 2)
60Hz, Sinusoidal, 1 minute, connection
pins to heat-sink plate
Ratings
400
–20~+100
–40~+125
1500
Unit
V
°C
°C
Vrms
Note 2 : Tf MEASUREMENT POINT
Al Board Specifications:
Dimensions 100 × 100 × 10mm, finishing: 12s, warp: –50~100µm
Control Terminals
18mm
16mm
FWD Chip
Al Board
IGBT/FWD Chip
IGBT Chip
Groove
Temp. measurement
point
(inside the Al board)
N W VUP
Power Terminals
100~200µm of evenly applied Silicon-Grease
Temp. measurement point
(inside the Al board)
Sep. 2001