PS21353-N Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – 600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
PS21353-N
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 5 TIMING CHARTS OF THE DIP-IPM PROTECTIVE FUNCTIONS
[A] Short-Circuit Protection (N-side only)
(For the external shunt resistor and CR connection, please refer to Fig. 3.)
a1. Normal operation : IGBT ON and carrying current.
a2. Short-circuit current detection (SC trigger).
a3. IGBT gate interrupt.
a4. IGBT turns OFF.
a5. FO timer operation starts : The pulse width of the FO signal is set by the external capacitor CFO.
a6. Input “H” : IGBT OFF state.
a7. Input “L” : IGBT ON state.
a8. IGBT OFF state.
N-side control input
Protection circuit state
Internal IGBT gate
Output current Ic
Sense voltage of the
shunt resistor
Fault output Fo
SET
a6 ^a7
RESET
a3
a2
SC
a4
a1
a8
SC reference voltage
CR circuit time constant DELAY
a5
[B] Under-Voltage Protection (N-side, UVD)
b1. Normal operation : IGBT ON and carrying current.
b2. Under-voltage trip (UVDt).
b3. IGBT OFF in spite of control input condition.
b4. FO timer operation starts.
b5. Under-voltage reset (UVDr).
b6. Normal operation : IGBT ON and carrying current.
Control input
Protection circuit state
Control supply voltage VD
UVDr
SET
RESET
UVDt _b2
b5
b1
b3
b6
Output current Ic
Fault output Fo
b4
Sep. 2001