PS21353-N Datasheet, PDF (5/9 Pages) Mitsubishi Electric Semiconductor – 600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
PS21353-N
TRANSFER-MOLD TYPE
INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Mounting torque
Terminal pulling strength
Bending strength
Weight
Heat-sink flatness
Condition
Mounting screw : M3
Weight 9.8N
Weight 4.9N. 90deg bend
Min.
—
0.59
EIAJ-ED-4701 10
EIAJ-ED-4701 2
—
—
(Note 6)
—
–50
Limits
Typ.
0.78
—
—
20
—
Max.
0.98
—
—
—
100
Unit
N·m
s
times
g
µm
Note 6: Measurement point of heat-sink flatness
+–
Measurement Range
DIP-IPM
3mm
Heat-sink
–
+
Heat-sink
RECOMMENDED OPERATION CONDITIONS
Symbol
Parameter
Condition
VCC
Supply voltage
VD
Control supply voltage
VDB
Control supply voltage
∆VD, ∆VDB Control supply variation
tdead
Arm shoot-through blocking time
fPWM
PWM input frequency
VCIN(ON) _{Input ON voltage}
VCIN(OFF) _{Input OFF voltage}
Applied between P-N
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
For each input signal
Tj ≤ 125°C, Tf ≤ 100°C
Applied between UP, VP, WP-VNC, UN, VN, WN-VNC
Limits
Min.
Typ. Max.
0
300
400
13.5 15.0 16.5
13.5 15.0 16.5
–1
—
1
1.5
—
—
—
15
—
0~0.65
4.0~5.5
Unit
V
V
V
V/µs
µs
kHz
V
V
Sep. 2001