PS21353-N Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – 600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.

Fig. 4 THE DIP-IPM INTERNAL CIRCUIT
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
PS21353-N
TRANSFER-MOLD TYPE
INSULATED TYPE
VUFB
VUFS
VP1
UP
VVFB
VVFS
VP1
VP
VWFB
VWFS
VP1
VP
VN1
UN
VN
WN
Fo
VNC
HVIC 1
VCC VB
IN HO
COM VS
IGBT1
DIP-IPM
P
Di1
U
HVIC 2
VCC VB
IGBT2
Di2
IN HO
COM VS
V
HVIC 3
VCC VB
IGBT3
Di3
IN HO
COM VS
LVIC
IGBT4
Di4
UOUT
VCC
IGBT5
Di5
VOUT
UN
IGBT6
Di6
VN
WOUT
WN
VNO
Fo
CIN
GND
CFO
CFO
CIN
W
VNO(NC)
N
Note: The IGBTs gates and the HVICs COM terminals are connected to the dummy pins.
Sep. 2001