CM900DUC-24S Datasheet, PDF (8/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T_j =25 °C
1000
C_ies
100
10
C_oes
1
C_res
0.1
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE V_CE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
V _{C C} = 600 V, I _C = 9 00 A, T _j =25 °C
20
TENTATIVE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=0 Ω, INDUCTIVE LOAD
---------------: T _j =150 °C, - - - - -: T _j =125 °C
1000
I_rr
t_rr
100
10
100
1000
EMITTER CURRENT I_E (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, T_C=25°C
R_th(j-c)Q=23 K/kW, R_th(j-c)D=39 K/kW
1
15
0.1
10
0.01
5
0
0
500
1000
1500
2000
2500
3000
GATE CHARGE Q_G (nC)
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
TIME (S)
July-2012
8