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| CM900DUC-24S Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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< IGBT MODULES >
CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 â¦, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
1000
10000
td(on)
tr
100
1000
td(off)
tf
10
100
COLLECTOR CURRENT IC (A)
100
1000
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 â¦,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
1000
100
Eon
Eoff
100
10
Err
TENTATIVE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC=900 A, VGE=±15 V, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
1000
10000
td(on)
tr
100
1000
td(off)
tf
10
100
0.1
1
10
EXTERNAL GATE RESISTANCE RG (â¦)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC/IE=900 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: Tj =150 °C, - - - - -: T j =125 °C
1000
Eoff
Eon
100
Err
10
100
July-2012
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
1
1000
7
10
0.1
1
10
EXTERNAL GATE RESISTANCE RG (â¦)
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