CM900DUC-24S Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T_j=25 °C, unless otherwise specified)
Symbol
Item
Conditions
V_CES
Collector-emitter voltage
G-E short-circuited
V_GES
I_C
I_CRM
P_tot
I_E
I_ERM
(Note1)
(Note1)
V_isol
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
Isolation voltage
C-E short-circuited
DC, T_C=125 °C ^{(Note2, 4)}
Pulse, Repetitive ^(Note3)
T_C=25 °C ^{(Note2, 4)}
(Note2)
Pulse, Repetitive ^(Note3)
Terminals to base plate, RMS, f=60 Hz, AC 1 min
T_jmax
T_Cmax
Maximum junction temperature
Maximum case temperature
-
(Note4)
T_jop
Operating junction temperature
-
T_stg
Storage temperature
-
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
Symbol
I_CES
I_GES
V_GE(th)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
V_CEsat
Collector-emitter saturation voltage
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V (Note1)
EC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
t (Note1)
rr
Q (Note1)
rr
E_on
E_off
E ^(Note1)
rr
R_CC'+EE'
r_g
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
Conditions
V_CE=V_CES, G-E short-circuited
V_GE=V_GES, C-E short-circuited
I_C=90 mA, V_CE=10 V
I_C=900 A ^(Note6) ,
V_GE=15 V,
(Terminal)
I_C=900 A, V_GE=15 V, (Chip)
T _j =25 °C
T _j =125 °C
T _j =150 °C
V_CE=10 V, G-E short-circuited
V_CC=600 V, I_C=900 A, V_GE=15 V
V_CC=600 V, I_C=900 A, V_GE=±15 V,
R_G=0 Ω, Inductive load
I_E=900 A ^(Note6) ,
G-E short-circuited,
T _j =25 °C
T _j =125 °C
(Terminal)
T _j =150 °C
I_E=900 A, G-E short-circuited, (Chip)
V_CC=600 V, I_E=900 A, V_GE=±15 V,
R_G=0 Ω, Inductive load
V_CC=600 V, I_C=I_E=900 A,
V_GE=±15 V, R_G=0 Ω, T _j =150 °C,
Inductive load
Main terminals-chip, per switch,
T_C=25 °C ^(Note4)
Per switch
Min.
-
-
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TENTATIVE
Rating
Unit
1200
V
± 20
V
900
A
1800
6520
W
900
A
1800
4000
V
175
°C
125
°C
-40 ~ +150
°C
-40 ~ +125
Limits
Unit
Typ.
Max.
-
1.0
mA
-
3.0
μA
6.0
6.6
V
1.55
1.90
1.75
-
V
1.80
-
1.55
-
V
-
90
-
18
nF
-
1.5
2300
-
nC
-
900
-
-
250
950
ns
-
350
1.65
2.10
1.65
-
V
1.65
-
1.65
-
V
-
450
ns
50
-
μC
65.3
-
mJ
183
-
73.3
-
mJ
0.286
-
mΩ
2.2
-
Ω
July-2012
2