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CM900DUC-24S Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
TENTATIVE
< IGBT MODULES >
CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............….......................… 9 0 0 A
Collector-emitter voltage VCES ......................… 1 2 0 0 V
Maximum junction temperature T j m a x .............. 1 7 5 °C
●Flat base Type
●Copper base plate (non-plating)
●RoHS Directive compliant
Dual switch (Half-Bridge)
APPLICATION
Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
July-2012
INTERNAL CONNECTION
C2
(Cs2)
C2E1
C1
(Cs1)
G2
Di2
Tr2
Di1
Tr1
E1
(Es1)
E2
G1
(Es2)
E2
C1
1
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3
±0.2
over 3 to 6
±0.3
over 6 to 30 ±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to be ±0.4.