CM900DUC-24S Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
V_CC
V_GEon
R_G
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
CHIP LOCATION (Top view)
Conditions
Applied across P-N terminals
Applied across G-Es terminals
Per switch
TENTATIVE
Limits
Unit
Min.
Typ.
Max.
-
600
850
V
13.5
15.0
16.5
V
0
-
3.6
Ω
Dimension in mm, tolerance: ±1 mm
TEST CIRCUIT
Tr1/Tr2: IGBT, Di1/Di2: FWDi
C1
Cs1
VGE=15V
G1
C1
Short- ^Cs1
IC
circuited
G1
C1
Short- ^Cs1
circuited
G1
C1
Short- ^Cs1
IE
circuited
G1
V
Es 1
Short- ^Cs2
circuited
G2
Es2
C2E1
E2
Es 1
V
Es 1
C2E1
Cs 2
Short- ^Cs2
C2E1
VGE=15V
circuited
G2
IC
G2
V
Es2
E2
Es2
E2
Es 1
C2E1
Short- ^Cs2
circuited
I_E
G2
V
Es2
E2
Tr1
Tr2
V_CEsat test circuit
Di1
Di2
V_EC test circuit
July-2012
4