CM900DUC-24S Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TENTATIVE
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Thermal resistance ^(Note4)
Contact thermal resistance ^(Note4)
Conditions
Junction to case, per Inverter IGBT
Junction to case, per Inverter FWDi
Case to heat sink, per 1 module,
Thermal grease applied ^(Note7)
Limits
Min.
Typ.
Max.
-
-
23
-
-
39
-
6
-
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
Mounting torque
M_s
d_s
Creepage distance
d_a
Clearance
m
Weight
e_c
Flatness of base plate
Conditions
Main terminals
Mounting to heat sink
Terminal to terminal
Terminal to base plate
Terminal to terminal
Terminal to base plate
-
On the centerline X, Y1, Y2
M 6 screw
M 6 screw
(Note5)
Limits
Min.
Typ.
Max.
3.5
4.0
4.5
3.5
4.0
4.5
24
-
-
33
-
-
14
-
-
33
-
-
-
1450
-
-50
-
+100
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
2. Junction temperature (T _j ) should not increase beyond T _{j m a x} rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T _j ) dose not exceed T _{j m a x} rating.
4. Case temperature (T_C) and heat sink temperature (T _s ) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7. The base plate (mounting side) flatness measurement points (X, Y1, Y2) are as follows of the following figure.
36 mm
36 mm
Unit
K/kW
K/kW
Unit
N·m
mm
mm
g
μm
Y1
Y2
X
Bottom
Bottom
Label side
-: Concave
Bottom
+: Convex
8. The company name and product names herein are the trademarks and registered trademarks of the respective companies.
July-2012
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