CM1000E4C-66R Datasheet, PDF (8/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 2500V, VGE = ±15V
Tj = 150°C, RG(off) = 8.4Ω
3000
2000
1000
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
16
VCC ≤ 2500V, VGE = ±15V
RG(on) = 2.4Ω, RG(off) = 8.4Ω
Tj = 150°C
12
8
4
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
4000
VCC ≤ 2500V, di/dt < 6kA/µs
Tj = 150°C
3000
2000
1000
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
Mar. 2009
8