CM1000E4C-66R Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
10²
10⁴
7 VCC = 1800V, VGE = ±15V
7
5 ^{RG(on) = 2.4Ω, LS = 150nH}
5
Tj = 125°C, Inductive load
3
3
2
2
10¹
lrr
10³
7
7
5
5
3
3
2
2
10⁰
7
5
3
2
10^-₁¹ ₀₂
10²
trr
7
5
3
2
2 3 4 5 7 10³
10¹
2 3 4 5 7 10⁴
EMITTER CURRENT (A)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
10²
10⁴
7 VCC = 1800V, VGE = ±15V
7
5 ^{RG(on) = 2.4Ω, LS = 150nH}
5
Tj = 150°C, Inductive load
3
3
2
2
10¹
lrr
10³
7
7
5
5
3
3
2
2
10⁰
7
5
3
2
10^-₁¹ ₀₂
trr
10²
7
5
3
2
2 3 4 5 7 10³
10¹
2 3 4 5 7 10⁴
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
Rth(j–c)Q = 12.0K/kW
Rth(j–c)R = 22.5K/kW
1.0
0.8
0.6
0.4
0.2
010_{-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101}
TIME (s)
Z Σ R ^1–exp


n
(t) =
th( j –c )
i
t
– _ti
i=I
Ri [K/kW] :
τi [sec] :
1
0.0096
0.0001
2
0.1893
0.0058
3
0.4044
0.0602
4
0.3967
0.3512
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
Mar. 2009