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| CM1000E4C-66R Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE | |||
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PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
7
VCC = 1800V, IC = 1000A
VGE = ±15V, LS = 150nH
6 Tj = 125°C, Inductive load
5
Eon
4
3
Eoff
2
1
Erec
0
0
5
10
15
20
GATE RESISTOR (â¦)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
7
VCC = 1800V, IC = 1000A
VGE = ±15V, LS = 150nH
6 Tj = 150°C, Inductive load
5
Eon
4
3
Eoff
2
1
Erec
0
0
5
10
15
20
GATE RESISTOR (â¦)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)
102
7 VCC = 1800V, VGE = ±15V
5 RG(on) = 2.4â¦, RG(off) = 8.4â¦
3 LS = 150nH, Tj = 125°C
2 Inductive load
101
7
5
3
td(off)
2
100
7
5 tf
3
2
td(on)
10-1
7
5
tr
3
2
10-12 02
2 3 4 5 7 103
2 3 4 5 7 104
COLLECTOR CURRENT (A)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)
102
7 VCC = 1800V, VGE = ±15V
5 RG(on) = 2.4â¦, RG(off) = 8.4â¦
3 LS = 150nH, Tj = 150°C
2 Inductive load
101
7
5
3
td(off)
2
100
7
5 tr
3
2
td(on)
10-1
7
5
tf
3
2
10-12 02
2 3 4 5 7 103
2 3 4 5 7 104
COLLECTOR CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
6
Mar. 2009
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