CM1000E4C-66R Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7 ^{VGE = 0V, Tj = 25°C}
5 ^{f = 100kHz}
3
2
Cies
10²
7
5
3
2
10¹
7
Coes
5
3
Cres
2
101⁰_{0-1 2 3 5 7100 2 3 5 7101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
7
VCC = 1800V, VGE = ±15V
RG(on) = 2.4Ω, RG(off) = 8.4Ω
6 LS = 150nH, Tj = 125°C
Inductive load
Eon
5
4
Eoff
3
2
Erec
1
0
0
400
800 1200 1600 2000
COLLECTOR CURRENT (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 1800V, IC = 1000A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
4
8
12
16
GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
7
VCC = 1800V, VGE = ±15V
RG(on) = 2.4Ω, RG(off) = 8.4Ω
Eon
6 LS = 150nH, Tj = 150°C
Inductive load
5
4
Eoff
3
2
Erec
1
0
0
400
800 1200 1600 2000
COLLECTOR CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
5
Mar. 2009