CM1000E4C-66R Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2000
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 150°C
1600
1200
VGE = 19V
VGE = 15V
VGE = 13V
VGE = 11V
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = VGE
1600
1200
800
VGE = 9V
400
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
800
400
0
0
Tj = 25°C
Tj = 150°C
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
2000
VGE = 15V
1600
1200
800
400
Tj = 25°C
Tj = 125°C
Tj = 150°C
0
0
1
2
3
4
5
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
2000
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS
(TYPICAL)
1600
1200
800
400
0
0
Tj = 25°C
Tj = 125°C
Tj = 150°C
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4
Mar. 2009