CM1000E4C-66R Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
Item
Reverse recovery time
trr
(Note 2)
Irr
Qrr
Erec(10%)
Reverse recovery current
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2)(Note 5)
VCC = 1800 V
IC = 1000 A
VGE = ±15 V
RG(on) = 2.4 Ω
Ls = 150 nH
Inductive load
Erec
Reverse recovery energy
(Note 2)(Note 6)
Conditions
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Limits
Min
Typ
Unit
Max
—
0.50
—
—
0.70
—
µs
—
0.80
—
—
850
—
—
1000
—
A
—
1050
—
—
700
—
—
1150
—
µC
—
1350
—
—
0.70
—
—
1.20
—
J/P
—
1.35
—
—
0.80
—
—
1.35
—
J/P
—
1.55
—
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q Thermal resistance
Rth(j-c)R Thermal resistance
Rth(c-f) Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Junction to Case, Clamp-Di part
Case to Fin, λgrease = 1W/m·K ,D(c-f) = 100 µm
Limits
Unit
Min
Typ
Max
—
—
12.0 K/kW
—
—
22.5 K/kW
—
—
22.5 K/kW
—
7.0
— K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Mt
Ms
Mounting torque
Mt
m
Mass
CTI
Comparative tracking index
da
Clearance
ds
Creepage distance
LP CE
Parasitic stray inductance
RCC’+EE’ Internal lead resistance
rg
Internal gate resistor
Conditions
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
Collector to Emitter
Anode to Cathode
Tc = 25°C, Collector to Emitter
Tc = 25°C, Anode to Cathode
Tc = 25°C
Limits
Unit
Min
Typ
Max
7.0
—
22.0 N·m
3.0
—
6.0 N·m
1.0
—
3.0 N·m
—
1.2
—
kg
600
—
—
—
19.5
—
—
mm
32.0
—
—
mm
—
22.0
—
nH
—
33.0
—
nH
—
0.24
—
mΩ
—
0.36
—
mΩ
—
2.25
—
Ω
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (150°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake chopper, anode to cathode
clamp diode (Clamp-Di).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
6. The integration range of Eon / Eoff / Erec according to IEC 60747.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
3
Mar. 2009