CM900HG-90H Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM900HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
2500
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 3200V, VGE = ±15V
Tj = 125°C, RG ≥ 10Ω
2000
1500
1000
500
0
0
1000 2000 3000 4000 5000
COLLECTOR-EMITTER VOLTAGE (V)
12000
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
VCC ≤ 3200V, VGE = ±15V
Tj = 125°C, RG ≥ 10Ω
10000
8000
6000
4000
2000
0
0
1000 2000 3000 4000 5000
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
2500
VCC ≤ 3200V, di/dt ≤ 3300A/µs
Tj = 125°C
2000
1500
1000
500
0
0
1000 2000 3000 4000 5000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
May 2009