CM900HG-90H Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM900HG-90H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM900HG-90H
● IC .................................................................. 900 A
● VCES ...................................................... 4500 V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57
±0.25
190
±0.5
57
±0.25
57
±0.25
5-M8 NUTS
6
4
2
(6)
(4)
(2)
C
C
C
C
3-M4 NUTS
screwing depth
min. 7.7
5
E
G
3
C
14
±0.3
59.2
±0.5
61.2
±0.5
61.2
±0.5
12
±0.3
G
1
E
8-φ7 MOUNTING HOLES
18
±0.3
screwing depth
min. 16.5
E
E
E
(5)
(3)
(1)
CIRCUIT DIAGRAM
41
±0.5
22
±0.3
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1
May 2009