CM900HG-90H Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM900HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
7
5
3
2
10⁰
7
5
3 _{VGE = 0V, Tj = 25°C}
2 _{f = 100kHz}
10^-₁¹_{0-1 2 3 5 7100 2 3}
5 710¹
Coes
Cres
2 3 5 710²
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 2250V, IC = 900A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
5
10
15
20
GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
10
VCC = 2250V, VGE = ±15V
RG = 10Ω, Tj = 125°C
Eon
Inductive load
8
6
Eoff
4
2
Erec
0
0
500
1000
1500
2000
COLLECTOR CURRENT (A)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
15
VCC = 2250V, IC = 900A
VGE = ±15V, Tj = 125°C
Inductive load
Eon
10
5
Eoff
Erec
0
0
10
20
30
40
GATE RESISTOR (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
5
May 2009