CM900HG-90H Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM900HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
VCES
Collector-emitter voltage
VGE = 0V, Tj = 25°C
4500
V
VGES
Gate-emitter voltage
VCE = 0V, Tj = 25°C
± 20
V
IC
Collector current
ICM
DC, Tc = 100°C
Pulse
900
A
(Note 1)
1800
A
IE
Emitter current
(Note 2) ^DC
IEM
Pulse
900
A
(Note 1)
1800
A
Pc
Maximum power dissipation (Note 3) Tc = 25°C, IGBT part
11300
W
Viso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1 min.
10200
V
Ve
Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
5100
V
Tj
Junction temperature
–40 ~ +150
°C
Top
Operating temperature
–40 ~ +125
°C
Tstg
Storage temperature
–40 ~ +125
°C
tpsc
Maximum short circuit pulse width VCC = 3200V, VCE ≤ VCES, VGE = 15V, Tj = 125°C
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
ICES
VGE(th)
IGES
Cies
Coes
Cres
Qg
VCE(sat)
td(on)
tr
Eon(10%)
td(off)
tf
Eoff(10%)
VEC
trr
Qrr
Erec(10%)
Item
Conditions
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
(Note 5)
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
VCE = VCES, VGE = 0V
VCE = 10 V, IC = 90 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
Tj = 25°C
Tj = 125°C
VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
VCC = 2250 V, IC = 900 A, VGE = ±15 V, Tj = 25°C
IC = 900 A
(Note 4) Tj = 25°C
VGE = 15 V
Tj = 125°C
VCC = 2250 V, IC = 900 A, VGE = ±15 V
RG = 10 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
VCC = 2250 V, IC = 900 A, VGE = ±15 V
RG = 10 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
IE = 900 A
VGE = 0 V
(Note 4) Tj = 25°C
Tj = 125°C
VCC = 2250 V, IE = 900 A, VGE = ±15 V
RG = 10 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
Limits
Unit
Min
Typ
Max
—
—
5
mA
—
12
50
5.0
6.0
7.0
V
—
—
0.5
µA
—
162
—
nF
—
12
—
nF
—
3.6
—
nF
—
15
—
µC
—
3.45
—
V
—
3.70
—
—
—
2.40
µs
—
—
1.20
µs
—
4.20
—
J/P
—
—
6.00
µs
—
—
1.20
µs
—
2.50
—
J/P
—
4.80
—
V
—
4.15
—
—
—
1.80
µs
—
920
—
µC
—
1.00
—
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
2
May 2009