CM900HG-90H Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM900HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm
Limits
Unit
Min
Typ
Max
—
—
11.0 K/kW
—
—
22.0 K/kW
—
6.0
— K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
Min
Mt
M8: Main terminals screw
7.0
Ms
Mounting torque
M6: Mounting screw
3.0
Mt
M4: Auxiliary terminals screw
1.0
m
Mass
—
CTI
Comparative tracking index
600
da
Clearance
26
ds
Creepage distance
56
LP CE
Internal inductance
—
RCC’+EE’ Internal lead resistance
Tc = 25°C
—
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
Limits
Typ
—
—
—
1.35
—
—
—
17
0.14
Max
15.0
6.0
3.0
—
—
—
—
—
—
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
3
May 2009