CM900HG-90H Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM900HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 125°C
1500
VGE = 20V
VGE = 15V
1000
VGE = 12V
VGE = 10V
VGE = 8V
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 20V
1500
1000
500
500
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
Tj = 25°C
Tj = 125°C
0
0
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 15V
1500
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
1500
1000
1000
500
Tj = 25°C
Tj = 125°C
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
500
Tj = 25°C
Tj = 125°C
0
012345678
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4
May 2009