CM1200HG-90R Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
12
V_CC ≤ 3200V, V_GE = ±15V
T_j = 125°C, R_G(on) = 2.7Ω, R_G(off) = 10Ω
10
8
6
4
2
0
0
1000 2000 3000 4000 5000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
3000
2500
VCC ≤ 3200V, di/dt < 6kA/µs
T_j = 125°C
2000
1500
1000
500
0
0 1000 2000 3000 4000 5000
Emitter-Collector Voltage [V]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
1
R_th(j-c)Q = 10.5K/kW
R_th(j-c)D = 19.5K/kW
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
Z ∑ R ^{1−exp n}
th(
j−c
(
)
t
)
=
i=1
⎪⎧
i
⎨
⎪⎩
τ ^⎜⎛
⎜
−
⎝
t
i
⎟⎞
⎟
⎠
⎪⎫
⎬
⎪⎭
R_i [K/kW] :
t_i [sec] :
1
0.0055
0.0001
2
0.2360
0.0131
3
0.4680
0.0878
4
0.2905
0.6247
June 2011
7