CM1200HG-90R Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2500
T_j = 25°C
2000
1500
V_GE = 16V
V_GE = 15V
V_GE = 13V
V_GE = 11V
1000
500
V_GE = 10V
0
0
2
4
6
8
Collector - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
2500
VGE = 15V
2000
1500
T_j = 25°C
T_j = 125°C
1000
500
0
0
2
4
6
8
Collector-Emitter Saturation Voltage [V]
TRANSFER CHARACTERISTICS
(TYPICAL)
2500
V_CE = V_GE
2000
1500
1000
500
T_j = 125°C
T_j = 25°C
0
0
4
8
12
16
Gate - Emitter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
2500
2000
1500
1000
T_j = 25°C
T_j = 125°C
500
0
0
1
2
3
4
5
Emitter-Collector Voltage [V]
June 2011
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