CM1200HG-90R Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HG-90R
z I_{C··························································}
1200A
z V_{CES···················································}
4500V
z 1-element in a Pack
z High insulated Type
z LPT-IGBT / Soft Recovery Diode
z AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
June 2011 _HVM-1056-C
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