CM1200HG-90R Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
C_ies
100
10
C_oes
C_res
VGE = 0V, T_j = 25°C
f = 100kHz
1
0.1
1
10
100
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
16
VCC = 2800V, VGE = ±15V
E_on
14
RG(on) = 2.7Ω, RG(off) = 10Ω
L_S = 150nH, T_j = 125°C
Inductive load
12
10
E_off
8
6
4
E_rec
2
0
0
500 1000 1500 2000 2500
Collector Current [A]
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 2800V, IC = 1200A
T_j = 25°C
15
10
5
0
-5
-10
-15
0
5
10
15
20
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
12
VCC = 2800V, IC = 1200A
VGE = ±15V, L_S = 150nH
10 ^{Tj = 125°C, Inductive load}
8
6
E_on
4
E_rec
2
0
0
1
2
3
4
5
Gate resistor [Ohm]
June 2011
5