CM1200HG-90R Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
V_CES
V_GES
I_C
I_CRM
I_E
I_ERM
P_tot
V_iso
V_e
T_j
T_jop
T_stg
t_psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
V_GE = 0V, T_j = −40…+125°C
V_GE = 0V, T_j = −50°C
V_CE = 0V, T_j = 25°C
DC, T_c = 85°C
Pulse ^{(Note 1)}
DC
Pulse ^{(Note 1)}
T_c = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q_PD ≤ 10 pC
V_CC = 3200V, V_CE ≤ V_CES, V_GE =15V, T_j =125°C
Ratings
Unit
4500
V
4400
± 20
V
1200
A
2400
A
1200
A
2400
A
11900
W
10200
V
5100
V
−50 ~ +150
°C
−50 ~ +125
°C
−55 ~ +125
°C
10
μs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min Typ Max
I_CES
Collector cutoff current
V_CE = V_CES, V_GE = 0V
T_j = 25°C
—
— 16.0
mA
T_j = 125°C — 16.0 —
V_GE(th)
Gate-emitter threshold voltage
V_CE = 10 V, I_C = 120 mA, T_j = 25°C
5.8 6.3 6.8
I_GES
Gate leakage current
V_GE = V_GES, V_CE = 0V, T_j = 25°C
−0.5 — 0.5
C_ies
Input capacitance
C_oes
Output capacitance
C_res
Reverse transfer capacitance
V_CE = 10 V, V_GE = 0 V, f = 100 kHz
T_j = 25°C
— 175.0 —
— 11.0 —
— 5.0 —
Q_G
V_CEsat
Total gate charge
V_CC = 2800V, I_C = 1200A, V_GE = ±15V
— 13.5 —
Collector-emitter saturation voltage
I_C = 1200 A ^{(Note 4)}
V_GE = 15 V
T_j = 25°C
— 3.50 —
V
T_j = 125°C — 4.40 5.20
t_d(on)
t_r
E_on(10%)
E_on
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-on switching energy
(Note 5)
(Note 6)
V_CC = 2800 V
I_C = 1200 A
V_GE = ±15 V
R_G(on) = 2.7 Ω
L_s = 150 nH
Inductive load
T_j = 25°C
— 1.00 —
μs
T_j = 125°C — 0.95 1.50
T_j = 25°C
— 0.28 —
μs
T_j = 125°C — 0.30 0.50
T_j = 25°C
— 3.90 —
J
T_j = 125°C — 4.70 —
T_j = 25°C
— 4.20 —
J
T_j = 125°C — 5.50 —
t_d(off)
t_f
E_off(10%)
E_off
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Turn-off switching energy
(Note 5)
(Note 6)
V_CC = 2800 V
I_C = 1200 A
V_GE = ±15 V
R_G(off) = 10 Ω
L_s = 150 nH
Inductive load
T_j = 25°C —
3.60 —
μs
T_j = 125°C —
3.80 5.00
T_j = 25°C —
0.35 —
μs
T_j = 125°C —
0.45 1.00
T_j = 25°C —
2.90 —
J
T_j = 125°C —
3.85 —
T_j = 25°C —
3.20 —
J
T_j = 125°C —
4.30 —
June 2011
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