CM1200HG-90R Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1200HG-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
12
VCC = 2800V, IC = 1200A
VGE = ±15V, L_S = 150nH
10 ^{Tj = 125°C, Inductive load}
8
6
E_off
4
2
0
0
5
10
15
20
Gate resistor [Ohm]
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
10
V_CC = 2800V, V_GE = ±15V
R_G(on) = 2.7Ω, R_G(off) = 10Ω
L_S = 150nH, T_j = 125°C
Inductive load
1
t_f
t_d(off)
t_d(on)
0.1
t_r
0.01
100
1000
Collector Current [A]
10000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V_CC = 2800V, V_GE = ±15V
R_G(on) = 2.7Ω, L_S = 150nH
T_j = 125°C, Inductive load
10
10000
I_rr
1000
1
t_rr
100
0.1
100
1000
Emitter Current [A]
10
10000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
3000
2500
VCC ≤ 3200V, VGE = ±15V
T_j = 125°C, RG(off) = 10Ω
2000
1500
1000
500
0
0 1000 2000 3000 4000 5000
Collector-Emitter Voltage [V]
June 2011
6