CM800DZ-34H Datasheet, PDF (6/6 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10¹
7 VCC = 850V, VGE = ±15V
5 ^{RG(on) = RG(off) = 3.3Ω}
Tj = 125°C, Inductive load
3
2
10⁰
7
5
3
tf
2
td(off)
td(on)
10^-1
7
tr
5
3
2
10^-₁² _{01 2 3 5 7102 2 3 5 7103 2 3 5 7104}
COLLECTOR CURRENT (A)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10²
10⁴
7 ^{VCC = 850V, VGE = ±15V}
7
5 ^{RG(on) = RG(off) = 3.3Ω}
5
Tj = 125°C, Inductive load
3
3
2
2
10¹
10³
7
7
5
5
3
lrr
3
2
trr
2
10⁰
10²
7
7
5
5
3
3
2
2
10^-₁¹ ₀₁
23
5 710²
23
5 710³
23
10¹
5 710⁴
EMITTER CURRENT (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
Single Pulse, TC = 25°C
Rth(j–c)Q = 20K/kW
1.0 ^{Rth(j–c)R = 34K/kW}
0.8
0.6
0.4
0.2
010_{-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101}
TIME (s)
2500
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 1150V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 3.3Ω
2000
1500
1000
500
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005