CM800DZ-34H Datasheet, PDF (5/6 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7 ^{VGE = 0V, Tj = 25°C}
5 ^{f = 100kHz}
3
2
10²
Cies
7
5
3
2
10¹
7
Coes
5
3
Cres
2
101⁰_{0-1 2 3 5 7100 2 3 5 7101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 850V, IC = 800A
Tj = 25°C
16
12
8
4
0
0
2
4
6
8
10
GATE CHARGE (µC)
1000
800
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 3.3Ω
Tj = 125°C, Inductive load
Eon
600
Eoff
400
200
0
0
Erec
400
800
1200
COLLECTOR CURRENT (A)
1600
1200
1000
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, IC = 800A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
800
600
Eoff
400
200
0
0
Erec
5
10
15
20
25
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005