CM800DZ-34H Datasheet, PDF (2/6 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
VCES
Collector-emitter voltage
VGE = 0V, Tj = 25°C
1700
V
VGES
Gate-emitter voltage
VCE = 0V, Tj = 25°C
±20
V
IC
Collector current
ICM
TC = 80°C
Pulse
800
A
(Note 1)
1600
A
IE (Note 2) _{Emitter current}
IEM (Note 2)
Pulse
800
A
(Note 1)
1600
A
PC (Note 3) Maximum power dissipation TC = 25°C, IGBT part
6200
W
Tj
Junction temperature
–40 ~ +150
°C
Top
Operating temperature
–40 ~ +125
°C
Tstg
Storage temperature
–40 ~ +125
°C
Viso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1min.
4000
V
Maximum short circuit pulse VCC = 1150V, VCES ≤ 1700V, VGE = 15V
tpsc
width
Tj = 125°C
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Min
ICES
Collector cut-off current
VCE = VCES, VGE = 0V, Tj = 25°C
—
Gate-emitter
VGE(th)
threshold voltage
IC = 80mA, VCE = 10V, Tj = 25°C
4.5
IGES
Gate leakage current
VGE = VGES, VCE = 0V, Tj = 25°C
—
VCE(sat)
Collector-emitter
saturation voltage
IC = 800A, VGE = 15V, Tj = 25°C
IC = 800A, VGE = 15V, Tj = 125°C
(Note 4) —
(Note 4) —
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V, f = 100kHz
—
Cres
Reverse transfer capacitance ^{VGE = 0V, Tj = 25°C}
—
Qg
Total gate charge
VCC = 850V, IC = 800A, VGE = 15V, Tj = 25°C
—
VEC (Note 2) Emitter-collector voltage
IE = 800A, VGE = 0V, Tj = 25°C
IE = 800A, VGE = 0V, Tj = 125°C
(Note 4) —
(Note 4) —
td(on)
Turn-on delay time
VCC = 850V, IC = 800A, VGE = ±15V
—
tr
Turn-on rise time
RG(on) = 3.3Ω, Tj = 125°C, Ls = 150nH
—
Eon
Turn-on switching energy
Inductive load
—
td(off)
Turn-off delay time
VCC = 850V, IC = 800A, VGE = ±15V
—
tf
Turn-off fall time
RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH
—
Eoff
Turn-off switching energy
Inductive load
—
trr (Note 2) Reverse recovery time
VCC = 850V, IC = 800A, VGE = ±15V
—
Qrr (Note 2) Reverse recovery charge
RG(on) = 3.3Ω, Tj = 125°C, Ls = 150nH
—
Erec (Note 2) Reverse recovery energy
Inductive load
—
Limits
Typ
—
5.5
—
2.60
3.10
72
9.0
3.6
6.6
2.30
2.00
—
—
350
—
—
260
—
300
120
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Unit
Max
12 mA
6.5
V
0.5 µA
3.30
—
V
—
nF
—
nF
—
nF
—
µC
3.00
V
—
1.60
µs
1.30
µs
— mJ/pulse
2.70
µs
0.50
µs
— mJ/pulse
2.70
µs
—
µC
— mJ/pulse
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005