CM800DZ-34H Datasheet, PDF (4/6 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
1600
1400
1200
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 25°C
VGE = 15V
VGE = 20V
VGE = 12V
1000
800
VGE = 10V
600
400
VGE = 8V
200
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
1600
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
1400
1200
1000
800
600
400
200
0
0
Tj = 25°C
Tj = 125°C
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
400
800
1200
1600
COLLECTOR CURRENT (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
400
800
1200
1600
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005