CM800DZ-34H Datasheet, PDF (1/6 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800DZ-34H
q IC ................................................................... 800A
q VCES ....................................................... 1700V
q Insulated Type
q 2-element in a Pack
q AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57±0.25
57±0.25
4 - M8 NUTS
4(E1)
E1
2(C2)
C2
E1
CM C1
E1
G1
C1
C2
E2
E2
C2
G2
G1
G2
C1
3(C1)
E2
1(E2)
CIRCUIT DIAGRAM
6 - M4 NUTS
screwing depth
min. 7.7
16
40
53
11.85
18
44
57
55.2
6 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
11.5
14
5
35
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005