CM800DZ-34H Datasheet, PDF (3/6 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part, 1/2 module
Junction to Case, FWDi part, 1/2 module
Case to Fin, λgrease = 1W/m·K, 1/2 module
Limits
Unit
Min
Typ
Max
—
—
20.0 K/kW
—
—
34.0 K/kW
—
16.0
— K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
M
—
CTI
da
ds
LC-E(int)
RC-E(int)
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
TC = 25°C
Limits
Unit
Min
Typ
Max
7.0
—
13.0
3.0
—
6.0 N·m
1.0
—
2.0
—
1.0
—
kg
250
—
—
—
10.0
—
—
mm
15.0
—
—
mm
—
18
—
nH
—
0.16
—
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005