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| MYX4DDR364M16JT Datasheet, PDF (6/128 Pages) Micross Components – 8n-bit prefetch architecture | |||
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1Gb SDRAM-DDR3
MYX4DDR364M16JT*
Table 3: 96-Ball FBGA â x16 Ball Descriptions (continued)
*Advanced information. Subject to change without notice.
Symbol
VDD
VDDQ
VREFCA
VREFDQ
VSS
VSSQ
ZQ
NC
Type Description
Supply
Supply
Supply
Supply
Supply
Power supply: 1.5V ±0.075V.
DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immunity.
Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper
device operation.
Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation.
Ground.
Supply DQ ground: Isolated on the device for improved noise immunity.
Reference External reference ball for output drive calibration: This ball is tied to an external 240Ω resistor (RZQ), which is tied to VSSQ.
â
No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls).
Electrical Specifications - Absolute Ratings
Stresses greater than those listed in Table 4 may cause
permanent damage to the device. This is a stress rating only,
and functional operation of the device at these or any other
conditions outside those indicated in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may adversely
affect reliability.
Table 4: Absolute Maximum Ratings
Symbol
VDD
VDDQ
VIN, VOUT
TC
TSTG
Parameter
VDD supply voltage relative to VSS
VDDQ supply voltage relative to VSSQ
Voltage on any ball relative to VSS
Operating case temperature â Industrial
Operating case temperature â Enhanced
Storage temperature
Min
Max
Unit
Notes
-0.4
1.975
V
1
-0.4
1.975
V
-0.4
1.975
V
-40
95
°C
2, 3
-40
105
°C
2, 3
-55
150
°C
Notes:
1. VDD and VDDQ must be within 300mV of each other at all
times, and VREF must not be greater than 0.6 Ã VDDQ. When
VDD and VDDQ are <500mV, VREF can be â¤300mV.
2. MAX operating case temperature. TC is measured in the
center of the package.
3. Device functionality is not guaranteed if the DRAM device
exceeds the maximum TC during operation.
MYX4DDR364M16JT*
Revision 1.5 - 11/19/15
6
Form #: CSI-D-685 Document 007
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