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| MYX4DDR364M16JT Datasheet, PDF (19/128 Pages) Micross Components – 8n-bit prefetch architecture | |||
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1.35V ODT Resistors
Table 16 provides an overview of the ODT DC electrical
characteristics. The values provided are not specification
requirements; however, they can be used as design guidelines
to indicate what RTT is targeted to provide:
⢠RTT 120Ω is made up of RTT120(PD240) and RTT120(PU240)
⢠RTT 60Ω is made up of RTT60(PD120) and RTT60(PU120)
⢠RTT 40Ω is made up of RTT40(PD80) and RTT40(PU80)
⢠RTT 30Ω is made up of RTT30(PD60) and RTT30(PU60)
⢠RTT 20Ω is made up of RTT20(PD40) and RTT20(PU40)
1Gb SDRAM-DDR3
MYX4DDR364M16JT*
*Advanced information. Subject to change without notice.
Table 17: RTT Effective Impedance
MR1 [9, 6, 2]
RTT
Resistor
VOUT
Min
Nom
Max
Units
0.2 Ã VDDQ
0.6
1.0
1.15
RZQ/1
RTT120(PD240)
0.5 Ã VDDQ
0.9
1.0
1.15
RZQ/1
0, 1, 0
120Ω
0.8 Ã VDDQ
0.9
0.2 Ã VDDQ
0.9
1.0
1.45
RZQ/1
1.0
1.45
RZQ/1
RTT120(PU240)
0.5 Ã VDDQ
0.9
1.0
1.15
RZQ/1
0.8 Ã VDDQ
0.6
1.0
1.15
RZQ/1
120Ω
VIL(AC) to VIH(AC)
0.9
1.0
1.65
RZQ/2
0.2 Ã VDDQ
0.6
1.0
1.15
RZQ/2
RTT60(PD120)
0.5 Ã VDDQ
0.9
1.0
1.15
RZQ/2
60Ω
0, 0, 1
0.8 Ã VDDQ
0.9
0.2 Ã VDDQ
0.9
1.0
1.45
RZQ/2
1.0
1.45
RZQ/2
RTT60(PU120)
0.5 Ã VDDQ
0.9
1.0
1.15
RZQ/2
0.8 Ã VDDQ
0.6
1.0
1.15
RZQ/2
60Ω
VIL(AC) to VIH(AC)
0.9
1.0
1.65
RZQ/4
MYX4DDR364M16JT*
Revision 1.5 - 11/19/15
19
Form #: CSI-D-685 Document 007
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