APT150GN120JDQ4 Datasheet, PDF (9/9 Pages) Microsemi Corporation – Thunderbolt IGBT

+18V
0V
di_F/dt Adjust
Vr
APT10035LLL
30μH
D.U.T.
Figure 32, Diode Test Circuit
PEARSON 2878
CURRENT
TRANSFORMER
APT150GN120JDQ4
trr/Qrr
Waveform
1 I_F - Forward Conduction Current
2 di_F/dt - Rate of Diode Current Change Through Zero Crossing.
3 I_RRM - Maximum Reverse Recovery Current.
1
Zero
4 trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
2
line through I_RRM and 0.25 I_RRM passes through zero.
5 Qrr - Area Under the Curve Defined by I_RRM and trr.
Figure 33, Diode Reverse Recovery Waveform and Definitions
4
5
3
0.25 IRRM
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Emitter/Anode
Collector/Cathode
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
* Emitter/Anode
Gate
Dimensions in Millimeters and (Inche)s
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.