APT150GN120JDQ4 Datasheet, PDF (5/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
10,000
1000
100
C_ies
C_oes
C_res
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT150GN120JDQ4
500
450
400
350
300
250
200
150
100
50
0
0 200 400 600 800 1000 1200 1400
V_CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.25
0.20
D = 0.9
0.15
0.7
0.5
0.10
0.3
Note:
t1
0.05
0
10^-5
0.1
0.05
10^-4
SINGLE PULSE
10^-3
10^-2
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10 ^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
.045
.0132 .022
.025
.569
30.75
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
50
25°C
40
30
20
75°C
10
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 800V
R_G = 4.7Ω
F
max
=
min
(f_max,
f
max2⁾
0.05
f_max1 = _{t d(on) + tr + td(off) + tf}
f_max2 =
P_diss - P _cond
E _on2 + E _off
P_diss =
T_J - T _C
R _θJC
0
0
50
100 150 200 250
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current