APT150GN120JDQ4 Datasheet, PDF (3/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
300
V_GE = 15V
250
T_J= -55°C
200
T_J= 25°C
150
100
T_J= 125°C
T_J= 150°C
50
0
0
1
2
3
4
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
300
250μs PULSE
TEST<0.5 % DUTY
CYCLE
250
T_J= -55°C
200
150
100
50
T_J= 25°C
T_J= 125°C
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4.0
T_J = 25°C.
250μs PULSE TEST
3.5
<0.5 % DUTY CYCLE
3.0
I_C = 300A
2.5
I_C = 150A
2.0
1.5
I_C = 75A
1.0
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-.50 -.25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
APT150GN120JDQ4
300
6.5V, 10 &15 V
6V
250
5.5V
200
150
5V
100
4.5V
50
4V
0
0
5 10 15 20 25 30
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
16
I_C = 100A
14
T_J = 25°C
V_CE = 240V
V_CE = 600V
12
10
V_CE = 960V
8
6
4
2
0
0
3.5
200 400 600 800
GATE CHARGE (nC)
FIGURE 4, Gate charge
1000
3.0
I_C = 300A
2.5
I_C = 150A
2.0
I_C = 75A
1.5
1.0
0.5
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
300
250
200
150
100
50
0
-50 -25 0 25 50 75 100 125 150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature