APT150GN120JDQ4 Datasheet, PDF (8/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Perfromance Curves
200
180
160
140
120
T_J = 175°C
100
80
T_J = 125°C
60
40
T_J = 25°C
20
T_J = -55°C
0
0
1
2
3
4
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
7000
6000
T_J = 125°C
V_R = 800V
120A
5000
4000
3000
2000
60A
30A
1000
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
1.2
Q_rr
t_rr
1.0
t_rr
0.8
I_RRM
0.6
0.4
Q_rr
0.2
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
350
300
250
200
150
100
50
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
APT150GN120JDQ4
400
350
120A
T_J = 125°C
V_R = 800V
300
60A
250
30A
200
150
100
50
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
50
45
T_J = 125°C
V_R = 800V
40
120A
35
30
25
60A
20
15
10
30A
5
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
90
Duty cycle = 0.5
80
T_J = 175°C
70
60
50
40
30
20
10
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature