APT150GN120JDQ4 Datasheet, PDF (2/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Dynamic Characteristic
APT150GN120JDQ4
Symbol Characteristic
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector Charge
SSOA _{Switching Safe Operating Area}
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy ⁴
Turn-On Switching Energy ⁵
Turn-Off Switching Energy ⁶
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy ⁴
Turn-On Switching Energy ⁵
Turn-Off Switching Energy ⁶
Test Conditions
Min
-
V_GE = 0V, V_CE = 25V
-
f = 1MHz
-
Gate Charge
-
V_GE = 15V
-
V_CE= 600V
-
I_C = 150A
-
T_J = 150°C, R_G = 1.0Ω ⁷, V_GE = 15V, ₄₅₀
L = 100μH, V_CE= 1200V
-
Inductive Switching (25°C)
-
V_CC = 800V
-
V_GE = 15V
-
I_C = 150A
R_G = 1.0Ω ⁷
-
T_J = +25°C
-
-
-
Inductive Switching (125°C)
-
V_CC = 800V
-
V_GE = 15V
-
I_C = 150A
-
R_G = 1.0Ω ⁷
-
T_J = +125°C
-
Typ
9500
500
400
9.5
800
70
430
55
65
675
85
22
27
15
55
65
780
175
23
35
22
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
V
nC
A
ns
μJ
ns
mJ
Thermal and Mechanical Characteristics
Symbol Characteristic / Test Conditions
Min Typ Max Unit
R_θJC
R_θJC
W_T
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Torque Terminals and Mounting Screws.
V_Isolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
-
-
0.20
°C/W
-
-
0.56
-
29.2
-
g
-
-
10 in·lbf
-
-
1.1
N·m
2500
-
-
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R_G is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.