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APT150GN120JDQ4 Datasheet, PDF (4/9 Pages) Microsemi Corporation – Thunderbolt IGBT
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Typical Performance Curves
60
50
VGE = 15V
40
30
20
VCE = 800V
10 TJ = 25°C, or 125°C
RG = 1.0Ω
L = 100μH
0
0 50 100 150 200 250 300 350
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
400
RG = 1.0Ω, L = 100μH, VCE = 800V
350
300
250
200
150
100
50
TJ = 25 or 125°C,VGE = 15V
0
0 50 100 150 200 250 300 350
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
120
100
VCE = 800V
VGE = +15V
RG = 1Ω
80
TJ = 125°C
60
40
TJ = 25°C
20
0
0 50 100 150 200 250 300 350
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
200
160
VCE = 800V
VGE = +15V
TJ = 125°C
Eon2,300A
120
80
Eoff,300A
Eon2,150A
40
Eoff,150A
Eon2,75A
Eoff,75A
0
0
5
10
15
20
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
1000
800
600
400
APT150GN120JDQ4
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
200
VCE = 800V
RG = 1.0Ω
L = 100μH
0
0 50 100 150 200 250 300 350
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
TJ = 125°C, VGE = 15V
200
150
100
TJ = 25°C, VGE = 15V
50
RG = 1.0Ω, L = 100μH, VCE = 800V
0
0 50 100 150 200 250 300 350
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
50
VCE = 800V
45 VGE = +15V
RG = 1Ω
40
35
TJ = 125°C
30
25
20
15
TJ = 25°C
10
5
0
0 50 100 150 200 250 300 350
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
120
100
VCE = 800V
VGE = +15V
RG = 1Ω
Eon2,300A
80
60
Eoff,300A
40
Eon2,150A
Eoff,150A
20
Eon2,75A
Eoff,75A
0
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
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