APT50GT120B2RDQ2G Datasheet, PDF (8/9 Pages) Microsemi Corporation – Thunderbolt IGBT

200
180
160
140
120
T_J = 175°C
100
80
60
T_J = 125°C
T_J = 25°C
40
20
T_J = -55°C
0
0
1
2
3
4
5
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
5000
T_J = 125°C
V_R = 800V
60A
4000
3000
2000
1000
30A
15A
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
1.2
t_rr ^Qrr
1.0
t_rr
0.8
I_RRM
0.6
0.4
Q_rr
0.2
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
200
180
160
140
120
100
80
60
40
20
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
600
500
T_J = 125°C
V_R = 800V
APT50GT120B2RDQ2G
60A
400
30A
300
15A
200
100
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
35
T_J = 125°C
V_R = 800V
30
60A
25
30A
20
15
15A
10
5
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
50
Duty cycle = 0.5
45
T_J = 175°C
40
35
30
25
20
15
10
5
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature