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| APT50GT120B2RDQ2G Datasheet, PDF (1/9 Pages) Microsemi Corporation – Thunderbolt IGBT | |||
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APT50GT120B2RDQ2G
1200V, 50A, VCE(ON) = 3.2V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged-
ness and ultrafast switching speed.
Features
⢠Low Forward Voltage Drop
⢠Low Tail Current
⢠RoHS Compliant
⢠RBSOA and SCSOA Rated
⢠High Frequency Switching to 50KHz
⢠Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
Ratings
Unit
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ, TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063â from Case for 10 Sec.
1200
±30
94
50
150
150A @ 1200V
625
-55 to 150
300
Volts
Amps
Watts
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3mA)
Gate Threshold Voltage (VCE = VGE, IC = 2mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Min Typ Max Unit
1200
-
-
4.5
5.5
6.5
Volts
2.7
3.2
3.7
-
4.0
-
-
-
300
μA
-
-
TBD
-
-
300
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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