APT50GT120B2RDQ2G Datasheet, PDF (7/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
APT50GT120B2RDQ2G
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT50GT120B2RDQ2G Unit
I_F(AV)
I_F(RMS)
Maximum Average Forward Current (T_C = 103°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
I_FSM Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3 ms)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
30
43
Amps
210
Min Type Max Unit
V_F
Forward Voltage
DYNAMIC CHARACTERISTICS
Symbol Characteristic
I_F = 30A
I_F = 60A
I_F = 30A, T_J = 125°C
2.8
3.3
3.4
Volts
2.1
Test Conditions
Min Typ Max Unit
t_rr
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 1A, di_F/dt = -100A/µs,
V_R = 30V, T_J = 25°C
I_F = 30A, di_F/dt = -200A/µs
V_R = 667V, T_C = 25°C
I_F = 30A, di_F/dt = -200A/µs
V_R = 667V, T_C = 125°C
I_F = 30A, di_F/dt = -1000A/µs
V_R = 800V, T_C = 125°C
-
26
-
ns
-
320
-
-
545
-
nC
-
4
-
Amps
-
435
-
ns
-
2100
-
nC
-
9
-
Amps
-
180
-
ns
-
2975
-
nC
-
28
-
Amps
0.90
0.80
D = 0.9
0.70
0.60
0.7
0.50
0.5
0.40
Note:
0.30
0.20`
0.10
0
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
0.570
0.00241
0.231
0.210
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL