APT50GT120B2RDQ2G Datasheet, PDF (5/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
5000
C_ies
1000
100
C_oes
C_res
10
0 100 200 300 400 500 600
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT50GT120B2RDQ2G
160
140
120
100
80
60
40
20
0
0 200 400 600 800 1000 1200 1400
V_CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.25
0. 2
D = 0.9
0.15
0.7
0.5
0. 1
Note:
t1
0.3
0.05
0
10^-5
0.1
0.05
10^-4
SINGLE PULSE
10^-3
10^-2
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
0.0487
0.151
0.00909
0.389
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
120
100
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 800V
R_G = 1.0Ω
80
60
75°C
F
max
=
min
(f_max,
f_max2)
0.05
f_max1 = _{td(on) + tr + td(off) + tf}
40
100°C
20
0
10 20 30 40
f_max2 =
P_diss - P_cond
E_on2 + E_off
P_diss =
T_J - T_C
R_θJC
50 60 70 80 90 100
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current